The well known book Design of Analog cmos Integrated Circuits by renowned Professor Behzad Razavi always rely on the table 2.1 for many of the practice questions as well as in its other chapters, it would be easier to put that into a webpage for reference rather than flipping through pages to find the table.
On the 2nd edition of the book, this table resides in page 35 of Section 2.4. This part describes the level 1 MOS SPICE model corresponding to 0.5 micrometer technology. Section 17.3 also introduces other models for more advanced description of new technologies, which will also be mentioned in this article.
For Triode Region
I_{D}=\frac{1}{2}K_{P}\frac{W}{L-2L_{D}}\left[2\left(V_{GS}-V_{TH}\right)V_{DS}-V_{DS}^{2}\right]\left(1+\lambda V_{DS}\right)For Saturation Region
I_{D}=\frac{1}{2}K_{P}\frac{W}{L-2L_{D}}\left(V_{GS}-V_{TH}\right)^{2}\left(1+\lambda V_{DS}\right)| name | nmos value | pmos value | unit | explanation |
| LEVEL | 1 | 1 | model level | |
| VTO | 0.7 | -0.8 | V | threshold voltage |
| GAMMA | 0.45 | 0.4 | V^{\frac{1}{2}} | body-effect coefficient |
| PHI | 0.9 | 0.8 | V | 2\Phi_{F} |
| NSUB | 9e+14 | 9e-9 | cm^{-3} | substrate doping |
| LD | 0.08e-6 | 0.09e-6 | m | source/drain side diffusion |
| UO | 350 | 100 | cm^{2}/V/s | channel mobility |
| LAMBDA | 0.1 | 0.2 | V^{-1} | channel-length modulation coefficient |
| TOX | 9e-9 | 9e-9 | m | gate-oxide thickness |
| PB | 0.9 | 0.9 | V | source/drain junction built-in potential |
| CJ | 0.56e-3 | 0.94e-3 | F/m^{2} | source/drain bottom-plate junction capacitance per unit area |
| CJSW | 0.35e-11 | 0.35e-11 | F/m | source/drain sidewall junction capacitance per unit length |
| MJ | 0.45 | 0.5 | exponent in CJ euqations | |
| MJSW | 0.2 | 0.3 | exponent in CJSW equations | |
| CGDO | 0.4e-9 | 0.3e-9 | F/m | gate-drain overlap capacitance per unit width |
| CGSO | F/m | gate-source overlap capacitance per unit width | ||
| JS | 1.0e-8 | 0.5e-8 | A/m^{2} | source/drain leakage current per unit area |
A table with only values is also provided for copying purpose:
| name | nmos value | pmos value |
| LEVEL | 1 | 1 |
| VTO | 0.7 | -0.8 |
| GAMMA | 0.45 | 0.4 |
| PHI | 0.9 | 0.8 |
| NSUB | 9e+14 | 9e-9 |
| LD | 0.08e-6 | 0.09e-6 |
| UO | 350 | 100 |
| LAMBDA | 0.1 | 0.2 |
| TOX | 9e-9 | 9e-9 |
| PB | 0.9 | 0.9 |
| CJ | 0.56e-3 | 0.94e-3 |
| CJSW | 0.35e-11 | 0.35e-11 |
| MJ | 0.45 | 0.5 |
| MJSW | 0.2 | 0.3 |
| CGDO | 0.4e-9 | 0.3e-9 |
| CGSO | ||
| JS | 1.0e-8 | 0.5e-8 |
In spice code, the above table could be transferred as follows for nmos and pmos.
.model mynmos nmos (level=1 vto=0.7 gamma=0.45 phi=0.9 nsub=9e+14 ld=0.08e-6 uo=350 lambda=0.1 tox=9e-9
+ pb=0.9 cj=0.56e-3 cjsw=0.35e-11 mj=0.45 mjsw=0.2 cgdo=0.4e-9 js=1.0e-8)
.model mypmos pmos (level=1 vto=-0.8 gamma=0.4 phi=0.8 nsub=9e-9 ld=0.09e-6 uo=100 lambda=0.2 tox=9e-9
+ pb=0.9 cj=0.94e-3 cjsw=0.35e-11 mj=0.5 mjsw=0.3 cgdo=0.3e-9 js=0.5e-8)Conclusion
This article contains the information on L1 Spice cmos model parameters for reference.
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